2025-12-14 00:21 |
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2025-12-13 20:06 |
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2025-12-13 20:04 |
Measurement of Threshold Voltages in PTP Structures and Estimation of P-stop Densities Across an ATLAS18 Silicon Strip Sensor Wafer Using TCAD Simulations
/ Unno, Yoshinobu (KEK High Energy Accelerator Research Organization (JP))
/ATLAS Collaboration
A total of 24,010 AC-coupled silicon strip sensors, consisting of n-type strips in p-type silicon and referred to as ATLAS18, are currently in production for installation in the upgraded ATLAS Inner Tracker (ITk). In n-in-p strip sensors, a dense p-type region (e.g., p-stop implant) is essential for electrically isolating the n-type strips from a conductive inversion layer between the strips, caused by positive interface charges. [...]
ATL-ITK-SLIDE-2025-716.-
Geneva : CERN, 2025 - 1 p.
Fulltext: PDF; External link: Original Communication (restricted to ATLAS)
In : 14th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD-14), Taipei, Tw, 14 - 21 Nov 2025
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2025-12-12 13:51 |
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2025-12-12 10:13 |
Investigation of the Current-Generation Mechanisms in the Edge Region of Planar Silicon Sensors using TCAD and TCT
/ Scharf, Christian (Humboldt University of Berlin (DE)) ; Lacker, Heiko Markus (Humboldt University of Berlin (DE)) ; Bloch, Ingo (Deutsches Elektronen-Synchrotron (DE)) ; Bruers, Ben (Deutsches Elektronen-Synchrotron (DE)) ; Ninca, Ilona-Stefana (Deutsches Elektronen-Synchrotron (DE)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (KEK High Energy Accelerator Research Organization (JP))
/ATLAS Collaboration
Radiation-hard silicon sensors used in high-energy physics experiments require a high electric field and are susceptible to surface breakdown at the edges of the planar sensors, especially at the tips of metal contacts or implants, where field peaks develop. These high-field regions, which are influenced by defects at the oxide interface and the geometry of the sensor, can give rise to avalanche breakdown. [...]
ATL-ITK-SLIDE-2025-714.-
Geneva : CERN, 2025 - 1 p.
Fulltext: PDF; External link: Original Communication (restricted to ATLAS)
In : 14th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD-14), Taipei, Tw, 14 - 21 Nov 2025
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2025-12-12 10:12 |
Current and low-field carrier mobility in silicon sensors irradiated to extreme fluences
/ Scharf, Christian (Humboldt University of Berlin (DE)) ; Lacker, Heiko Markus (Humboldt University of Berlin (DE)) ; Bloch, Ingo (Deutsches Elektronen-Synchrotron (DE)) ; Bruers, Ben (Deutsches Elektronen-Synchrotron (DE)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; Cindro, Vladimir (Jozef Stefan Institute (SI)) ; Mandic, Igor (Jozef Stefan Institute (SI)) ; Mikuz, Marko (Jozef Stefan Institute (SI)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (KEK High Energy Accelerator Research Organization (JP))
/ATLAS Collaboration
We present a study of the forward and reverse current in silicon pad diodes irradiated to extreme neutron fluences of up to $5 \times 10^{17}\,n_{eq}/$cm$^2$, corresponding to expected fluences at the innermost radii of tracking detectors at a future circular hadron collider. At such fluences, the low-doped silicon bulk and the highly doped implant no longer behave like a typical pn diode. [...]
ATL-ITK-SLIDE-2025-713.-
Geneva : CERN, 2025 - 1 p.
Fulltext: PDF; External link: Original Communication (restricted to ATLAS)
In : 14th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD-14), Taipei, Tw, 14 - 21 Nov 2025
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2025-12-11 11:04 |
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2025-12-11 10:21 |
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2025-12-11 10:15 |
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2025-12-11 10:14 |
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