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Low-field carrier mobilities in silicon irradiated to extreme fluences
/ Scharf, Christian (Humboldt University of Berlin (DE)) ; Li, Peilin (Deutsches Elektronen-Synchrotron (DE)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Klein, Christoph Thomas (Carleton University (CA)) ; Mandic, Igor (Jozef Stefan Institute (SI)) ; Unno, Yoshinobu (KEK High Energy Accelerator Research Organization (JP)) ; Bruers, Ben (Deutsches Elektronen-Synchrotron (DE)) ; Lacker, Heiko Markus (Humboldt University of Berlin (DE)) ; Bloch, Ingo (Deutsches Elektronen-Synchrotron (DE))
- Writing - Review & Editing, Investigation, Validation Project administration Project administration Resources Project administration Writing - Review & Editing Funding acquisition Funding acquisition
The low-field carrier mobilities in <100> silicon were quantified as a function of the $1\,$MeV neutron-equivalent fluence up to $10^{18}\,$cm$^{-2}$ and for temperatures between $235\,$K and $295\,$K. [...]
ATL-ITK-PROC-2026-016.
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2026 - 9.
Original Communication (restricted to ATLAS) - Full text
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